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160 pages • missing pub info (view editions)
ISBN/UID: 9783843378376
Format: Paperback
Language: English
Publisher: LAP Lambert Academic Publishing
Edition Pub Date: 28 December 2010
Description
Silicon carbide (SiC) and gallium nitride (GaN) are believed to be ideal materials for the fabrication of electronic devices that can operate at high power levels, temperatures, and frequencies, because they exhibit a larger bandgap, higher breakd...
Community Reviews
Content Warnings
160 pages • missing pub info (view editions)
ISBN/UID: 9783843378376
Format: Paperback
Language: English
Publisher: LAP Lambert Academic Publishing
Edition Pub Date: 28 December 2010
Description
Silicon carbide (SiC) and gallium nitride (GaN) are believed to be ideal materials for the fabrication of electronic devices that can operate at high power levels, temperatures, and frequencies, because they exhibit a larger bandgap, higher breakd...
Community Reviews
Content Warnings